issue 2 - july 2006 1 www.zetex.com ? zetex semiconductors plc 2006 fcx1053a sot89 npn medium power transistor summary bv ceo = 75v r ce(sat) = 78m i c = 3a description this medium power npn transistor, offered in the sot89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications. features ? extremely low equivalent on-resistance; r ce(sat) = 7.8m at 4.5a 3 amps continuous current up to 10 amps peak current very low saturation voltages excellent h fe characteristics up to 10 amps applications emergency lighting circuits motor driving (including dc fans) solenoid, relay and actuator drivers dc-dc modules backlight inverters power switches mosfet gate drivers ordering information device marking 053 device reel size (inches) tape width (mm) quantity per reel fcx1053ata 7 12 1,000 c e b c e pinout - top view c b
fcx1053a issue 2 - july 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on 50mm x 50mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 75 v emitter-base voltage v ebo 5v continuous collector current (a) i c 3a peak pulse current i cm 10 a power dissipation at t amb = 25c (a) p d 1.6 w linear derating factor 13 mw/c power dissipation at t amb = 25c (b) p d 2.0 w linear derating factor 16 mw/c operating and storage temperature range t j ;t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) r ja 72 c/w junction to ambient (b) r ja 62 c/w
fcx1053a issue 2 - july 2006 3 www.zetex.com ? zetex semiconductors plc 2006 thermal characteristics
fcx1053a issue 2 - july 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo 150 250 v i c = 100 a collector-emitter breakdown voltage v ces 150 250 v i c = 100 a collector-emitter breakdown voltage v ceo 75 100 v i c = 10ma collector-emitter breakdown voltage v cev 150 250 v i c = 100 a, v eb = 1v emitter-base breakdown voltage v (br)ebo 58.8 vi e = 100 a collector cut- off current i cbo 0.9 10 na v cb = 120v emitter cut-off current i ebo 0.3 10 na v eb = 4v collector-emitter cut-off current i ces 1.5 10 na v ces = 120v collector-emitter saturation voltage v ce(sat) 21 30 mv i c = 0.2a, i b = 20ma (*) notes: (*) measured under pulsed conditions. pulse width = 300 s. duty 2%. 55 75 mv i c = 0.5a, i b = 20ma (*) 150 200 mv i c = 1a, i b = 10ma (*) 160 210 mv i c = 2a, i b = 100ma (*) 350 440 mv i c = 4.5a, i b = 200ma (*) base-emitter saturation voltage v be(sat) 900 1000 mv i c = 3a, i b = 100ma (*) base-emitter turn-on voltage v be(on) 825 950 mv i c = 3a, v ce = 2v (*) static forward current transfer ratio h fe 270 440 i c = 10ma, v ce = 2v (*) 300 450 1200 i c = 0.5a, v ce = 2v (*) 300 450 i c = 1a, v ce = 2v (*) 40 60 i c = 4.5a, v ce = 2v (*) 20 i c = 10a, v ce = 2v (*) switching times t on 162 ns i c = 2a, i b1 = i b2 = 20ma, v cc = 50v t off 900 ns i c = 2a, i b1 = i b2 = 20ma, v cc = 50v transition frequency f t 140 mhz i c = 50ma, v ce = 10v, f = 100mhz output capacitance c obo 21 30 pf v cb = 10v, f = 1mhz
fcx1053a issue 2 - july 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
fcx1053a issue 2 - july 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot89 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e1 2.13 2.29 0.084 0.090 b 0.44 0.56 0.017 0.022 e 1.50 bsc 0.059 bsc b1 0.36 0.48 0.014 0.019 e1 3.00 bsc 0.118 bsc c 0.35 0.44 0.014 0.019 h 3.94 4.25 0.155 0.167 d 4.40 4.60 0.173 0.181 l 0.89 1.20 0.155 0.167 e 2.29 2.60 0.090 0.102 - - - - d1 d a c b1 l e h e1 b e e1
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